参数资料
型号: FDS8978
厂商: Fairchild Semiconductor
文件页数: 4/11页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 8-SOIC
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 18 毫欧 @ 7.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 26nC @ 10V
输入电容 (Ciss) @ Vds: 907pF @ 15V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: FDS8978DKR
Typical Characteristics T J = 25°C unless otherwise noted
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
50
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V DS = 5V
30
10
STARTING T J = 25 o C
20
T J = 25 o C
STARTING T J = 150 o C
10
T J = 150 o C
T J = -55 o C
1
0.01
0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
0
1
2 3 4
V GS , GATE TO SOURCE VOLTAGE (V)
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
50
Figure 6. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
40
30
V GS = 10V
V GS = 5V
V GS = 4.5V
V GS = 3.5V
40
30
I D = 10.2A
20
20
10
V GS = 3V
10
I D = 1A
0
0.0
0.2 0.4 0.6 0.8
V DS , DRAIN TO SOURCE VOLTAGE (V)
1.0
0
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
V GS = V DS , I D = 250 μ A
1.4
1.0
1.2
0.8
1.0
V GS = 10V, I D = 10.2A
0.8
0.6
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
T J , JUNCTION TEMPERATURE ( o C)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
?2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
4
www.fairchildsemi.com
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