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| 型号： | FDS8962C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 30V 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Product Discontinuation 27/Feb/2012 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A，5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 575pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS8962CDKR |
June 200 6
FDS8962C
Dual N & P-Channel PowerTrench ? MOSFET
Features
■ Q1: N-Channel
7.0A, 30V R DS(on) = 0.030 ? @ V GS = 10V
R DS(on) = 0.044 ? @ V GS = 4.5V
■ Q2: P-Channel
-5A, -30V R DS(on) = 0.052 ? @ V GS = -10V
R DS(on) = 0.080 ? @ V GS = -4.5V
■ Fast switching speed
■ High power and handling capability in a widely used surface
mount package
General Description
These dual N- and P-Channel enhancement mode power ?eld
effect transistors are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state ressitance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D1
D1
D2
D2
5
6
Q2
4
3
SO-8
Pin 1
S1
G1
G2
S2
7
8
Q1
2
1
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Q1
30
± 20
Q2
- 30
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
7
-5
A
– Pulsed
20
-20
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDS8962C
?2005 Fairchild Semiconductor Corporation
FDS8962C Rev. A 1
Device
FDS8962C
Reel Size
13”
1
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8978 | MOSFET N-CH DUAL 30V 8-SOIC |
| FDS8984_F085 | MOSFET N-CH 30V 8-SOIC |
| FDS8984 | MOSFET N-CHAN 30V 7A 8-SOIC |
| FDS9400A | MOSFET P-CH 30V 3.4A 8SOIC |
| FDS9431A_F085 | MOSFET P-CH 20V 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8978 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8978_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8978_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET |
| FDS8978_F123 | 功能描述:MOSFET 30V N-CHAN 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8984 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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