- 您现在的位置：买卖IC网 > Datasheet目录428 > FDS8949 (Fairchild Semiconductor)MOSFET N-CH DUAL 40V 6A 8-SOIC Datasheet资料下载
参数资料
| 型号： | FDS8949 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 40V 6A 8-SOIC |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 955pF @ 20V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDS8949DKR |
October 2006
FDS8949
Dual N-Channel Logic Level PowerTrench ? MOSFET
40V, 6A, 29m ?
tm
Features
Max r DS(on) = 29m ? at V GS = 10V
Max r DS(on) = 36m ? at V GS = 4.5V
Low gate charge
High performance trench technology for extremely low
r DS(on)
High power and current handling capability
RoHS compliant
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench ? process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Inverter
Power suppliers
D2
D2
D1
D1
SO-8
Pin 1
S1
G1
S2
G2
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
40
±20
Units
V
V
I D
E AS
Drain Current -Continuous
-Pulsed
Drain-Source Avalanche Energy
(Note 1a)
(Note 3)
6
20
26
A
mJ
Power Dissipation for Dual Operation
2
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.9
T J , T STG
Operating and Storage Junction Temperature Range
-55 to 150
° C
Thermal Characteristics
R θ JA
Thermal Resistance-Single operation, Junction to Ambient
(Note 1a)
81
R θ JA
R θ JC
Thermal Resistance-Single operation, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1b)
(Note 1)
135
40
° C/W
Package Marking and Ordering Information
Device Marking
FDS8949
Device
FDS8949
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2006 Fairchild Semiconductor Corporation
FDS8949 Rev. B1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8958A_F085 | MOSFET N/P-CH 30V DUAL 8-SOIC |
| FDS8958B | MOSFET N/P-CH 30V TRENCH 8-SOIC |
| FDS8958 | MOSFET N/P-CH DUAL 30V 8SOIC |
| FDS8960C | MOSFET N/P-CH DUAL 35V 8-SOIC |
| FDS8962C | MOSFET N/P-CH DUAL 30V 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8949 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDS8949_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench? MOSFET |
| FDS8949_F085 | 功能描述:MOSFET N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8958 | 功能描述:MOSFET 30V Dual N & P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8958A | 功能描述:MOSFET SO8 COMP N-P-CH T/R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。