参数资料
型号: FDS8958A_F085
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N/P-CH 30V DUAL 8-SOIC
标准包装: 1
系列: PowerTrench®
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7A,5A
开态Rds(最大)@ Id, Vgs @ 25° C: 28 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 16nC @ 10V
输入电容 (Ciss) @ Vds: 575pF @ 15V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: FDS8958A_F085DKR
February 2010
FDS8958A _F085
Dual N & P-Channel PowerTrench ? MOSFET
tm
General Description
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
?
?
?
?
?
?
Q1 : N-Channel
7.0A, 30V R DS(on) = 0.028 ? @ V GS = 10V
R DS(on) = 0.040 ? @ V GS = 4.5V
Q2 : P-Channel
-5A, -30V R DS(on) = 0.052 ? @ V GS = -10V
R DS(on) = 0.080 ? @ V GS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Qualified to AEC Q101
RoHS Compliant
D D2
D D1
D D1
D D2
5
6
Q2
4
3
S2 G
S1 S
SO-8
Pin 1 SO-8
S
G2
G1 S
7
8
Q1
2
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q1
30
± 20
Q2
30
± 20
Units
V
V
I D
Drain Current
- Continuous
- Pulsed
(Note 1a)
7
20
-5
-20
A
P D
Power Dissipation for Dual Operation
2
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
1.6
0.9
1.6
0.9
W
E AS
Single Pulse Avalanche Energy
(Note 3)
54
13
mJ
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
° C/W
R θ JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
° C/W
Package Marking and Ordering Information
Device Marking
FDS8958A
Device
FDS8958A _F085
Reel Size
13”
Tape width
12mm
Quantity
2500 units
?20 10 Fairchild Semiconductor Corporation
FDS 8958A _F085 Rev. A
1
www.fairchildsemi.com
相关PDF资料
PDF描述
FDS8958B MOSFET N/P-CH 30V TRENCH 8-SOIC
FDS8958 MOSFET N/P-CH DUAL 30V 8SOIC
FDS8960C MOSFET N/P-CH DUAL 35V 8-SOIC
FDS8962C MOSFET N/P-CH DUAL 30V 8SOIC
FDS8978 MOSFET N-CH DUAL 30V 8-SOIC
相关代理商/技术参数
参数描述
FDS8958B 功能描述:MOSFET 30V 6.4A Dual N&P Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS8960C 功能描述:MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS8960C_0511 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench㈢ MOSFET
FDS8962C 功能描述:MOSFET SO8 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS8978 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube