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参数资料
| 型号： | FDS8958A_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V DUAL 8-SOIC |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A，5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 575pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | FDS8958A_F085DKR |
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
V DD = 15 V, I D = 1 A,
V GS = 10V, R GEN = 6 ?
Q2
V DD = -15 V, I D = -1 A,
V GS = -10V, R GEN = 6 ?
Q1
V DS = 15 V, I D = 7 A, V GS = 10 V
Q2
V DS = -15 V, I D = -5 A,V GS = -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
7
5
13
23
14
3
9
1 1 . 4
9.6
1.7
2.2
2.1
1.7
16
14
10
24
37
25
6
17
1 6
13
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
I S M
V SD
t rr
Q rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Plused Drain-Source Diode Forward Current (Note 2)
Drain-Source Diode Forward V GS = 0 V, I S = 1.3 A (Note 2)
Voltage V GS = 0 V, I S = -1.3 A (Note 2)
Diode Reverse Recovery Q1
Time I F = 7 A, d iF /d t = 100 A/μs
Diode Reverse Recovery Q2
Charge I F = -5 A, d iF /d t = 100 A/μs
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.75
-0.88
19
19
9
6
1.3
-1.3
20
- 20
1.2
-1.2
A
A
V
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
mounted on a .02 in
a) 78°/W when
mounted on a
0.5 in 2 pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I AS = 6A, V DD = 30V, V GS = 10V (Q1).
Starting TJ = 25°C, L = 3mH, I AS = 3A, V DD = 30V, V GS = 10V (Q2).
FDS 8958A _F085 Rev. A
b) 125°/W when
pad of 2 oz copper
3
2
c) 135°/W when mounted on a
minimum pad.
www.fairchildsemi.com
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