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参数资料
| 型号： | FDS9934C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 20V 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 2,500 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A，5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 6.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 650pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
| 其它名称： | FDS9934C-ND FDS9934CTR |
Electrical Characteristics
(continued)
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t d(on)
t r
Turn-On Delay Time
Turn-On Rise Time
Q1
V DD = 10 V, I D = 1 A,
V GS = 4.5V, R GEN = 6 ?
Q1
Q2
Q1
8
16
9
16
29
17
ns
ns
Q2
9
18
t d(off)
t f
Turn-Off Delay Time
Turn-Off Fall Time
Q2
V DD = –6V, I D = –1A,
V GS = –4.5V, R GEN = 6 ?
Q1
Q2
Q1
15
25
4
26
41
9
ns
ns
Q2
9
19
Q g
Total Gate Charge
Q1
Q1
6.2
9
nC
V DS = 10 V, I D = 3 A, V GS = 4.5V
Q2
8.7
12
Q gs
Gate-Source Charge
Q1
1.2
nC
Q2
2.1
Q gd
Gate-Drain Charge
Q2
V DS = –6 V, I D = –3.2 A,V GS = –4.5 V
Q1
Q2
1.7
2.1
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
Q1
1.3
A
Q2
–1.3
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V,
V GS = 0 V,
I S = 1.3 A
I S = -2.0 A
(Note 2)
(Note 2)
Q1
Q2
0.73
–0.8
1.2
–1.2
V
t rr
Q rr
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Q1
I F = 6.5 A,
Q2
I F = -3.2 A,
d iF /d t = 100 A/μs
d iF /d t = 100 A/μs
Q1
Q2
Q1
Q2
15
20
5
7
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 78° C /W when
mounted on a
0.5 in 2 pad of 2 oz
b) 125° C /W when
mounted on a .02 in 2
pad of 2 oz copper
c) 135° C /W when mounted on a
minimum pad.
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDS9934C Rev D( W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9934C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS9936 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS9936A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9945 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes |
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