参数资料
型号: FDS9934C
厂商: Fairchild Semiconductor
文件页数: 6/8页
文件大小: 0K
描述: MOSFET N/P-CH DUAL 20V 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 2,500
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.5A,5A
开态Rds(最大)@ Id, Vgs @ 25° C: 30 毫欧 @ 6.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 9nC @ 4.5V
输入电容 (Ciss) @ Vds: 650pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
其它名称: FDS9934C-ND
FDS9934CTR
Typical Characteristics: Q2 (P-Channel)
30
1.8
20
V GS = -4.5V
-4.0V
V
-3.5V
V
-3.0V
1.6
V GS =-2.5V
1.4
-3.0V
-2.5V
1.2
-3.5V
10
0
-2.0V
1
0.8
-4.0V
-4.5V
0
1
2
3
4
5
0
6
12
18
24
30
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.4
-I D , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
I D = -2.5A
T A = 125 C
1.3
1.2
1.1
1
0.9
0.8
I D = -5A
V GS = -4.5V
0.12
0.1
0.08
0.06
0.04
0.02
T A = 25 o C
o
T J , JUNCTION TEMPERATURE ( C)
-50
-25
0 25 50 75 100
o
125
150
0
2
4 6
-V GS , GATE TO SOURCE VOLTAGE (V)
8
10
Figure 13. On-Resistance Variation with
Temperature.
30
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
125 C
25
V DS = -5V
T A = -55 o C
o
10
V GS =0V
25 o C
20
1
T A = 125 C
15
10
5
0
0.1
0.01
0.001
0.0001
o
25 o C
-55 o C
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9934C Rev D (W)
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