- 您现在的位置：买卖IC网 > Datasheet目录428 > FDT434P (Fairchild Semiconductor)MOSFET P-CH 20V 6A SOT-223 Datasheet资料下载
参数资料
| 型号： | FDT434P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 6A SOT-223 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1187pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDT434PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V, I D = –250 μ A
–20
V
? BV DSS
? T J
I DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = –250 μ A,Referenced to 25 ° C
V DS = –16 V, V GS = 0 V
–28
–1
mV/ ° C
μ A
I GSSF
I GSSR
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
V GS = 8 V,
V GS = –8 V
V DS = 0 V
V DS = 0 V
100
–100
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
I D(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V DS = V GS , I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
V GS = –4.5 V, I D = –6 A
V GS = –2.5 V, I D = –4 A
V GS = –4.5 V, I D = –6 A T J =125 ° C
V GS = –4.5 V, V DS = –5 V
V DS = –10 V,
I D = –6 A
–0.4
–20
–0.6
2
0.040
0.050
0.067
6.5
–1
0.050
0.070
0.083
V
mV/ ° C
?
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1187
270
114
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –5 V,
V GS = –4.5 V,
V DS = –10 V,
V GS = –4.5 V
I D = –1 A,
R GEN = 6 ?
I D = –6 A,
8
15
45
30
13
1.8
16
25
65
50
19
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.5
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = –2.5 A
(Note 2)
–0.75
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 42°C/W when
mounted on a 1in 2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
?201 1 Fairchild Semiconductor Corporation
FD T434P Rev. C 2
b) 95°/W when mounted
on a .0066 in 2 pad of
2 oz copper
2
c) 110°/W when mounted on a
minimum pad.
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDT439N | MOSFET N-CH 30V 6.3A SOT-223 |
| FDT457N | MOSFET N-CH 30V 5A SOT-223 |
| FDT458P | MOSFET P-CH 30V 3.4A SOT-223 |
| FDT86102LZ | MOSFET N-CH 100V 6.6A SOT-223 |
| FDT86106LZ | MOSFET N-CH 100V 3.2A SOT-223-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT434P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDT434P_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench??? MOSFET |
| FDT434P_Q | 功能描述:MOSFET SOT-223 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT439N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT439N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
发布紧急采购，3分钟左右您将得到回复。