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参数资料
| 型号： | FGA15N120AND |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 24 A, 1200 V, N-CHANNEL IGBT |
| 封装： | TO-3PN, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 574K |
| 代理商： | FGA15N120AND |
FGA15N120AND Rev. A
F
2003 Fairchild Semiconductor Corporation
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25
℃
T
C
= 125
℃
td(on)
tr
S
Gate Resistance, R
G
[
]
1
10
0
500
1000
1500
2000
2500
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
Crss
C
Collector-Emitter Voltage, V
CE
[V]
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25
℃
T
C
= 125
℃
td(off)
tf
S
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
= 600V, V
GE
=
±
15V
I
C
= 15A
T
C
= 25
℃
T
C
= 125
℃
Eon
Eoff
S
Gate Resistance, R
G
[
]
5
10
15
20
25
30
100
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
℃
T
C
= 125
℃
tr
td(on)
S
Collector Current, I
C
[A]
5
10
15
20
25
30
100
1000
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
℃
T
C
= 125
℃
td(off)
tf
S
Collector Current, I
C
[A]
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGA15N120ANDTU | 功能描述:IGBT 晶体管 NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGA15N120ANTD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_1 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_F109 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
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