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参数资料
| 型号： | FGA15N120AND |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 24 A, 1200 V, N-CHANNEL IGBT |
| 封装： | TO-3PN, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 574K |
| 代理商： | FGA15N120AND |
FGA15N120AND Rev. A
F
2003 Fairchild Semiconductor Corporation
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
Rectangular Pulse Duration [sec]
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 40
T
C
= 25
℃
Vcc = 200V
G
G
Gate Charge, Q
g
[nC]
5
10
15
20
25
30
0.1
1
10
Common Emitter
V
GE
=
±
15V, R
G
= 20
T
C
= 25
℃
T
C
= 125
℃
Eon
Eoff
S
Collector Current, I
C
[A]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
×
Zthjc + T
C
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
o
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125
℃
C
C
Collector-Emitter Voltage, V
CE
[V]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGA15N120ANDTU | 功能描述:IGBT 晶体管 NPT IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGA15N120ANTD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_1 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA15N120ANTD_F109 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
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