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参数资料
型号： FGD3040G2
厂商： Fairchild Semiconductor
文件页数： 2/10页
文件大小： 0K
描述： IGBT N-CH IGNITION 400V DPAK
标准包装： 2,500
系列： EcoSPARK™
电压 - 集电极发射极击穿（最大）： 400V
Vge, Ic时的最大Vce（开）： 1.25V @ 4V，6A
电流 - 集电极 (Ic)（最大）： 23.2A
功率 - 最大： 150W
输入类型： 逻辑
安装类型： 表面贴装
封装/外壳： TO-252-3，DPak（2 引线+接片），SC-63
供应商设备封装： TO-252-3
包装： 带卷 (TR)
Device Maximum Ratings T A = 25°C unless otherwise noted
Symbol
BV CER
BV ECS
E SCIS25
Parameter
Collector to Emitter Breakdown Voltage (I C = 1mA)
Emitter to Collector Voltage - Reverse Battery Condition (I C = 10mA)
Self Clamping Inductive Switching Energy (Note 1)
Ratings
400
28
300
Units
V
V
mJ
E SCIS150 Self Clamping Inductive Switching Energy (Note 2)
170
mJ
C
C
C
C
I C25
I C110
V GEM
P D
T J
T STG
T L
T PKG
ESD
Collector Current Continuous, at V GE = 5.0V, T C = 25°C
Collector Current Continuous, at V GE = 5.0V, T C = 110°C
Gate to Emitter Voltage Continuous
Power Dissipation Total, at T C = 25°C
Power Dissipation Derating, for T C > 25 o C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Reflow soldering according to JESD020C
HBM-Electrostatic Discharge Voltage at100pF, 1500 Ω
CDM-Electrostatic Discharge Voltage at 1 Ω
41
25.6
±10
150
1
- 55 to +175
- 55 to +175
300
260
4
2
A
A
V
W
W/ o C
o
o
o
o
kV
kV
Package Marking and Ordering Information
Device Marking
FGD3040G2
Device
FGD3040G2_F085
Package
TO252
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
BV CER
BV CES
I CE = 2mA, V GE = 0,
Collector to Emitter Breakdown Voltage R GE = 1K Ω ,
T J = -40 to 150 o C
I CE = 10mA, V GE = 0V,
Collector to Emitter Breakdown Voltage R GE = 0,
T J = -40 to 150 o C
370
390
400
420
430
450
V
V
BV ECS
Emitter to Collector Breakdown Voltage
I CE = -20mA, V GE = 0V,
T J = 25°C
28
-
-
V
BV GES
I CER
I ECS
R 1
R 2
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
I GES = ±2mA
V CE = 250V, R GE = 1K ?
V EC = 24V,
T J = 25 o C
T J = 150 o C
T J = 25 o C
T J = 150 o C
±12
-
-
-
-
-
10K
±14
-
-
-
-
120
-
-
25
1
1
40
-
30K
V
μ A
mA
mA
Ω
Ω
On State Characteristics
V CE(SAT) Collector to Emitter Saturation Voltage I CE = 6A, V GE = 4V,
V CE(SAT) Collector to Emitter Saturation Voltage I CE = 10A, V GE = 4.5V,
V CE(SAT) Collector to Emitter Saturation Voltage I CE = 15A, V GE = 4.5V,
T J = 25 o C
T J = 150 o C
T J = 150 o C
-
-
-
1.15
1.35
1.68
1.25
1.50
1.85
V
V
V
E SCIS
Self Clamped Inductive Switching
L = 3.0 mHy,R G = 1K ? ,
V GE = 5V, (Note 1)
T J = 25°C
-
-
300
mJ
@2013 Fairchild Semiconductor Corporation
FGD3040G2_F085 Rev.C2
2
www.fairchildsemi.com
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