参数资料
型号: FGPF4533
厂商: Fairchild Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IGBT PDP 330V TO-220-3FP
标准包装: 50
IGBT 类型: 沟道
电压 - 集电极发射极击穿(最大): 330V
Vge, Ic时的最大Vce(开): 1.8V @ 15V,50A
功率 - 最大: 28.4W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGPF4533
FGPF4533
TO-220F
Tube
N/A
N/A
50
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 250 ? A
330
-
-
V
? BV CE S
? T J
I CES
I GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 ? A
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
0.3
-
-
-
100
±400
V/ o C
? A
nA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I C = 250 ? A, V CE = V GE
I C = 20 A , V GE = 15 V
I C = 50 A , V GE = 15 V,
T C = 25 o C
I C = 50 A , V GE = 15 V,
T C = 125 o C
2.4
-
-
-
3.3
1.15
1.55
1.6
4.0
-
1.8
-
V
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
1294
-
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
57
41
-
-
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
-
6
-
ns
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q g
Q ge
Q gc
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V CC = 200 V, I C = 20 A
R G = 5 ? , V GE = 15 V
Resistive Load, T C = 25 o C
V CC = 200 V, I C = 20 A,
R G = 5 ?? , V GE = 15 V,
Resistive Load, T C = 125 o C
V CE = 200 V , I C = 20 A
V GE = 15 V
-
-
-
-
-
-
-
-
-
-
22
40
220
6
24
42
277
44
6
14
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
?2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. C1
2
www.fairchildsemi.com
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