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| 型号： | FQA8N100C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 1000V 8A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 1000V（1kV） |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.45 欧姆 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3220pF @ 25V |
| 功率 - 最大： | 225W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
| 其它名称： | FQA8N100C-ND FQA8N100CFS |
March 201 4
FQA8N 1 00C
N-Channel QFET ? MOSFET
10 0 0 V, 8 A, 1.45 Ω
Features
? R DS(on) = 1.45 Ω (Max.) @ V GS = 10 V , I D = 4 A
? Low G ate C harge ( T yp . 53 nC)
? Low Crss ( T yp . 16 pF)
? 100% A valanche T ested
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies.
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA8N100C
1000
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
8
5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
32
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
850
8
22.5
4.0
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
225
1.79
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/ 8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA8N100C
0.56
0.24
40
Unit
° C/W
° C/W
° C/W
?2005 Fairchild Semiconductor Corporation
FQA8N 1 00C Rev C1
1
www.fairchildsemi.com
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