参数资料
型号: GA1A2S100SS
厂商: Sharp Microelectronics
文件页数: 2/10页
文件大小: 0K
描述: LIGHT DETECTOR OPIC 555NM
标准包装: 2,000
带接近传感器:
波长: 555nm
电源电压: 2.7 V ~ 3.6 V
输出类型: 电流
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 径向 - 3 引线,成形
包装: 散装
其它名称: 425-2778
425-2778-2
425-2778-2-ND
GA1A2S100SS-ND
GA1A2S100SS/GA1A2S100LY
■ External Dimensions
GA1A2S100SS
φ 1.60
3- φ 0.90
1.27 1.27
2-C0.5
3.0
Center of
light detection
0.7
0.7
0.1 MAX.
0.15
φ 1.5E.PI N
R0.5
2 - 0.9
(1.7)
(52°)
3 - 0.4 +0.3
3 - 0.45 +0.3
(2.54)
(1.27)
-0.1
-0.1
(6°)
(6°)
Pin Arran g ement
1
(6°)
(6°)
3
No.
1
2
3
Name
V CC
G N D
I O
2
NOTES:
1. Units: mm
2. Unspecified tolerence: ±0.2 mm
3. ( ): Reference dimensions
4. Package: Transparent
5. The thin bu rr thickness (0.05 mm MAX.) and the gate bu rr (0.3 mm MAX.) are not incl u ded in o u tline dimensions
6. Resin protr u sion: 1.4 mm MAX. ho w e v er, the thin bu rr adheres to the lead 1.4 mm MAX. from the resin
Sheet No.: D1-A00501EN
2
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