参数资料
型号: GA1A2S100SS
厂商: Sharp Microelectronics
文件页数: 3/10页
文件大小: 0K
描述: LIGHT DETECTOR OPIC 555NM
标准包装: 2,000
带接近传感器:
波长: 555nm
电源电压: 2.7 V ~ 3.6 V
输出类型: 电流
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 径向 - 3 引线,成形
包装: 散装
其它名称: 425-2778
425-2778-2
425-2778-2-ND
GA1A2S100SS-ND
GA1A2S100SS/GA1A2S100LY
GA1A2S100LY
1.8
2 - C0.5
0.3 MAX.
Gate bu rr
3.0
Center of light
detection
(4°)
0.7
0.7
(4°)
0.1 MAX.
0.4 +0.30
1.4 MAX.
(4°)
0.15
(4°)
-0.10
Resin bu rr
0.87
R0.7
(1.7)
R0.7
(2.54)
PCB layo u t pattern
0.2 MAX.
Resin bu rr
(6°)
1
(6°)
3
2.54
φ 1.80
2.54
Pin Arran g ement
3 - φ 1.0
No.
Name
1.27 1.27
2
1
2
3
V CC
G N D
I O
3 - 0.45 +0.3
-0.1
NOTES:
1. Units: mm
2. Unspecified tolerance: ±0.2 mm
3. ( ): Reference dimensions
4. Package: Transparent
5. B u rr thickness (0.05 mm MAX.) and gate bu rr thickness
(0.3 mm MAX.) are not incl u ded in the o u tline dimensions.
6. Resin protr u sion: 1.4 mm MAX. ho w e v er, the thin bu rr adheres to the lead 1.4 mm MAX. from the resin.
Sheet No.: D1-A00501EN
3
相关PDF资料
PDF描述
GF570 LAMP INCANDESCENT
GL100MN0MP1 EMITTER IR 940NM GP 3.0MW SMD
GL100MN1MP1 IRED 940NM TOP MNT SMD
GL100MN3MP1 EMITTER IR 940NM HP 6.0MW SMD
GL390V EMITTER IR 950NM 9MW T/H
相关代理商/技术参数
参数描述
GA1A-3 制造商:SAE Power 功能描述:
GA1A3Q 制造商:NEC 制造商全称:NEC 功能描述:MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
GA1A4M 制造商:NEC 制造商全称:NEC 功能描述:MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
GA1A4M-T1 制造商:NEC 制造商全称:NEC 功能描述:MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
GA1A4M-T1-A 制造商:Renesas Electronics Corporation 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R