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参数资料
| 型号： | GA1A2S100SS |
| 厂商： | Sharp Microelectronics |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | LIGHT DETECTOR OPIC 555NM |
| 标准包装： | 2,000 |
| 带接近传感器： | 无 |
| 波长： | 555nm |
| 电源电压： | 2.7 V ~ 3.6 V |
| 输出类型： | 电流 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 径向 - 3 引线，成形 |
| 包装： | 散装 |
| 其它名称： | 425-2778 425-2778-2 425-2778-2-ND GA1A2S100SS-ND |
GA1A2S100SS/GA1A2S100LY
■ Presence of ODCs (RoHS Compliance)
This product shall not contain the following materials, and they are not used in the production process for this
product:
? Regulated substances: CFCs, Halon, Carbon tetrachloride, 1,1,1-Trichloroethane (Methylchloroform). Specific
brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
? Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl
ethers (PBDE).
? Content information about the six substances specified in “Management Methods for Control of Pollution
Caused by Electronic Information Products Regulation” (Chinese: )
Toxic and Hazdardous Substances
Category
Lead (Pb) mercury (Hg) Cadmium (Cd)
Hexavalent
chromiun (Cr 6+ )
Polybrominated
biphenyls (PBB)
Polybrominated
diphenyl ethers
(PBDE)
OPIC Light Sensors
?
?
?
?
?
?
NOTE: ? indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement
as described in SJ/T 11363-2006 standard.
■ Packing Specifications
1. Box shape and general dimensions for GA1A2S100SS conform to those shown in Fig. 3, and to those shown
in Fig. 4 for GA1A2S100LY.
2. Inner packing is as shown in the Figures.
3. For GA1A2S100SS:
Average quantity per bag = 1000 pcs.
Average quantity per box = 2000 pcs.
4. For GA1A2S100LY:
Average quantity per sleeve = 100 pcs.
Average quantity per box = 2000 pcs.
5. Product mass: 0.1 g (approximately)
Sheet No.: D1-A00501EN
7
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相关代理商/技术参数 |
参数描述 |
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| GA1A-3 | 制造商:SAE Power 功能描述: |
| GA1A3Q | 制造商:NEC 制造商全称:NEC 功能描述:MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA1A4M | 制造商:NEC 制造商全称:NEC 功能描述:MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA1A4M-T1 | 制造商:NEC 制造商全称:NEC 功能描述:MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| GA1A4M-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R |
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