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参数资料
| 型号： | GWM160-0055P3 |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC FULL BRIDGE 3PH W/MOSF ISODIL |
| 标准包装： | 20 |
| FET 型： | 6 N-沟道（3 相桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 160A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 90nC @ 10V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | ISOPLUS-DIL? |
| 供应商设备封装： | ISOPLUS-DIL? |
| 包装： | 管件 |
GWM 160-0055P3
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
V DSS = 55 V
I D25 = 160 A
R DSon typ. = 2.0 m W
G
G3
G5
S
G2
S2
S3
G4
S4
S5
G6
S6
L
L2
L3
Bent leads
Surface Mount
Device
MOSFETs
L-
Applications
Straight leads
Symbol
V DSS
Conditions
T J = 25°C to 50°C
Maximum Ratings
55 V
AC drives
? in automobiles
- electric power steering
V GS
± 20
V
- starter generator
I D25
I D90
I F25
I F90
T C = 25°C
T C = 90°C
T C = 25°C (diode)
T C = 90°C (diode)
60
20
35
90
A
A
A
A
? in industrial vehicles
- propulsion drives
- fork lift drives
? in battery supplied equipment
Features
Symbol
Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
? MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
min.
typ.
max.
? package:
R DSon 1)
V GS(th)
I DSS
I GSS
on chip level at
V GS = 0 V; I D = 00 A
V DS = 20 V; I D = mA
V DS = V DSS ; V GS = 0 V
V GS = ± 20 V; V DS = 0 V
T J = 25°C
T J = 25°C
T J = 25°C
T J = 25°C
2
2.0
3.4
0.
3.0
4
0.2
m W
m W
V
μA
mA
μA
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
? Space and weight savings
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
E on
E off
E recoff
R thJC
R thJH
V GS = 0 V; V DS = 2 V; I D = 60 A
inductive load
V GS = 0 V; V DS = 24 V
I D = 00 A; R G = 39 ? ;
T J = 25°C
with heat transfer paste
90
8
25
95
05
500
0
0. 2
0.52
0.0 2
.2
0.9
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
Package options
? 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
)
V DS = I D · (R DS(on) + 2R Pin to Chip )
IXYS reserves the right to change limits, test conditions and dimensions.
? 2006 IXYS All rights reserved
-6
相关PDF资料 |
PDF描述 |
|---|---|
| GWM160-0055X1-SMD SAM | IC FULL BRIDGE 3PH ISOPLUS SMD |
| GWM70-01P2 | IC FULL BRIDGE 3PH W/MOSF ISODIL |
| HAIS 50-P | SENSOR CURRENT 50A 5V MOD |
| HAL 500-S | CURRENT TRANSDUCERS 500A 15V |
| HAL 600-S | SENSOR CURR 600A 3000V MOD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GWM160-0055P3-SMD | 制造商:IXYS Corporation 功能描述:GWM160 Series 55 Vds 2 Mohm 1.2 kW 160 A 3 Phase Full Bridge w/ Trench MOSFET |
| GWM160-0055X1 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Three phase full Bridge with Trench MOSFETs in DCB isolated high current package |
| GWM160-0055X1-SL | 功能描述:MOSFET 160 Amps 55V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| GWM160-0055X1-SL SAM | 功能描述:分立半导体模块 160 Amps 55V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| GWM160-0055X1-SLSAM | 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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