参数资料
型号: GWM160-0055P3
厂商: IXYS
文件页数: 3/6页
文件大小: 0K
描述: IC FULL BRIDGE 3PH W/MOSF ISODIL
标准包装: 20
FET 型: 6 N-沟道(3 相桥)
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 160A
开态Rds(最大)@ Id, Vgs @ 25° C: 3 毫欧 @ 100A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 90nC @ 10V
安装类型: 表面贴装
封装/外壳: ISOPLUS-DIL?
供应商设备封装: ISOPLUS-DIL?
包装: 管件
GWM 160-0055P3
S traight L eads
GWM  60-0055P3-SL
B ent L eads
GWM  60-0 0 55P3-BL
Leads
Ordering Code &
Packing Unit Marking
Part Marking
Code
Key
Straight GWM  60-0055P3 - SL
GWM  60-0055P3 502 829
S urface M ount D evice
GWM  60-0 0 55P3-SMD
SMD
Bent
GWM  60-0055P3 - SMD GWM  60-0055P3 502 836
contact
GWM  60-0055P3 - BL GWM  60-0055P3
factory
IXYS reserves the right to change limits, test conditions and dimensions.
? 2006 IXYS All rights reserved
3-6
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GWM160-0055P3-SMD 制造商:IXYS Corporation 功能描述:GWM160 Series 55 Vds 2 Mohm 1.2 kW 160 A 3 Phase Full Bridge w/ Trench MOSFET
GWM160-0055X1 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
GWM160-0055X1-SL 功能描述:MOSFET 160 Amps 55V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
GWM160-0055X1-SL SAM 功能描述:分立半导体模块 160 Amps 55V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
GWM160-0055X1-SLSAM 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube