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参数资料
| 型号： | HGT1S10N120BNS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CHAN 1200V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 管件 |
| 其它名称： | HGT1S10N120BNS-ND HGT1S10N120BNSFS |
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM
Switching Safe Operating Area at T J = 150 o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg
Short Circuit Withstand Time (Note 3) at V GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 3) at V GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
1200
35
17
80
± 20
± 30
55A at 1200V
298
2.38
80
-55 to 150
300
260
8
15
V
A
A
A
V
V
W
W/ o C
mJ
o C
o C
o C
μ s
μ s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I CE = 20A, L = 400 μ H, T J = 25 o C.
3. V CE(PK) = 840V, T J = 125 o C, R G = 10 ?.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
I C = 10mA, V GE = 0V
MIN
1200
15
TYP
-
-
MAX
-
-
UNITS
V
V
Collector to Emitter Leakage Current
I CES
V CE = 1200V
T C = 25 o C
-
-
250
μ A
T C = 125 o C
T C = 150 o C
-
-
150
-
-
2
μ A
mA
Collector to Emitter Saturation Voltage
V CE(SAT)
I C = 10A,
V GE = 15V
T C = 25 o C
T C = 150 o C
-
-
2.45
3.7
2.7
4.2
V
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
V GE(TH)
I GES
SSOA
V GEP
I C = 90 μ A, V CE = V GE
V GE = ± 20V
T J = 150 o C, R G = 10?, V GE = 15V,
L = 400 μ H, V CE(PK) = 1200V
I C = 10A, V CE = 600V
6.0
-
55
-
6.8
-
-
10.4
-
± 250
-
-
V
nA
A
V
On-State Gate Charge
Q G(ON)
I C = 10A,
V CE = 600V
V GE = 15V
V GE = 20V
-
-
100
130
120
150
nC
nC
?2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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相关代理商/技术参数 |
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|---|---|
| HGT1S10N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
| HGT1S10N120BNST | 功能描述:IGBT 晶体管 N-Channel IGBT NPT Series 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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| HGT1S11N120CNS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S12N60A4DS | 功能描述:IGBT 晶体管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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