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参数资料
| 型号： | HGT1S10N120BNS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IGBT NPT N-CHAN 1200V TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| IGBT 类型： | NPT |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 35A |
| 功率 - 最大： | 298W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 管件 |
| 其它名称： | HGT1S10N120BNS-ND HGT1S10N120BNSFS |
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves
Unless Otherwise Specified (Continued)
T J = 150 o C, R G = 10 ? , L = 2mH, V CE = 960V
25
V CE = 840V, R G = 10 ? , T J = 125 o C
250
100
20
200
50
T C = 75 o C, V GE = 15V, IDEAL DIODE
15
t SC
I SC
150
10
1
2
f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )
f MAX2 = (P D - P C ) / (E ON2 + E OFF )
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R ?JC = 0.42 o C/W, SEE NOTES
5
T C V GE
75 o C 15V
75 o C 12V
110 o C 15V
110 o C 12V
10
20
10
5
12
13
14
15
16
100
50
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
50
40
DUTY CYCLE <0.5%, V GE = 12V
PULSE DURATION = 250 μ s
50
40
T C = -55 o C
T C = 25 o C
30
30
20
10
T C = -55 o C
T C = 150 o C
T C = 25 o C
20
10
T C = 150 o C
DUTY CYCLE <0.5%, V GE = 15V
PULSE DURATION = 250 μ s
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
R G = 10 ? , L = 2mH, V CE = 960V
2.0
R G = 10 ? , L = 2mH, V CE = 960V
4
T J = 150 o C, V GE = 12V, V GE = 15V
1.5
T J = 150 o C, V GE = 12V OR 15V
3
1.0
2
T J = 25 o C, V GE = 12V OR 15V
0.5
1
T J = 25 o C, V GE = 12V, V GE = 15V
0
0
5
10
15
20
0
0
5
10
15
20
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
?2002 Fairchild Semiconductor Corporation
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S10N120BNS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
| HGT1S10N120BNST | 功能描述:IGBT 晶体管 N-Channel IGBT NPT Series 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S11N120CNS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
| HGT1S11N120CNS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
| HGT1S12N60A4DS | 功能描述:IGBT 晶体管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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