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参数资料
| 型号： | HGTP3N60A4D_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specied
HGT1S3N60A4DS
HGTP3N60A4D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
17
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
8A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
40
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
15A at 600V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
70
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.58
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specications
TJ = 25
oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250A, VGE = 0V
600
-
V
Collector to Emitter Leakage Current
ICES
VCE = 600V
TJ = 25
oC
-
250
A
TJ = 125
oC
-
3.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 3A,
VGE = 15V
TJ = 25
oC
-
2.0
2.7
V
TJ = 125
oC
-
1.6
2.2
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250A, VCE = 600V
4.5
6.1
7.0
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 50, VGE = 15V,
L = 200
H, VCE = 600V
15
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 3A, VCE = 300V
-
8.8
-
V
On-State Gate Charge
Qg(ON)
IC = 3A,
VCE = 300V
VGE = 15V
-
21
25
nC
VGE = 20V
-
26
32
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC,
ICE = 3A,
VCE = 390V,
VGE = 15V,
RG = 50,
L = 1mH,
Test Circuit (Figure 24)
-6
-
ns
Current Rise Time
trI
-11
-
ns
Current Turn-Off Delay Time
td(OFF)I
-73
-
ns
Current Fall Time
tfI
-47
-
ns
Turn-On Energy (Note 2)
EON1
-37
-
J
Turn-On Energy (Note 2)
EON2
-55
70
J
Turn-Off Energy (Note 3)
EOFF
-25
35
J
HGT1S3N60A4DS, HGTP3N60A4D
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