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参数资料
| 型号： | HGTP3N60A4D_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 7/9页 |
| 文件大小： | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specied (Continued)
400
800
t rr
,RECO
VER
Y
TIMES
(ns)
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
200
600
6
22
10
14
18
26
1000
125oC ta
125oC tb
25oC ta
25oC tb
IEC = 3A, VCE = 390V
160
80
40
0
Qrr
,REVERSE
RECO
VER
Y
CHARGE
(nc)
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
1000
200
400
200
600
800
120
125oC, IEC = 3A
125oC, IEC = 1.5A
25oC, IEC = 20A
25oC, IEC = 10A
VCE = 390V
t1, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
,
NORMALIZED
THERMAL
RESPONSE
10-2
10-1
100
10-5
10-3
10-2
10-1
100
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
RG = 50
L = 1mH
VDD = 390V
+
-
HGTP3N60A4D
DUT
DIODE TA49369
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
ICE
EOFF
E0N2
HGT1S3N60A4DS, HGTP3N60A4D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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