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参数资料
| 型号： | HGTP3N60A4D_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 6/9页 |
| 文件大小： | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specied (Continued)
0
50
100
50
75
100
TC, CASE TEMPERATURE (
oC)
150
125
25
150
250
200
E
TOT
A
L
,T
O
T
A
L
SWITCHING
ENERGY
LOSS
(
J)
ICE = 4.5A
ICE = 3A
ICE = 1.5A
ETOTAL = EON2 + EOFF
RG = 50, L = 1mH, VCE = 390V, VGE = 15V
30
10
100
RG, GATE RESISTANCE ()
100
3
1000
E
TOT
A
L
,T
O
T
AL
SWITCHING
ENERGY
LOSS
(
J)
1000
ICE = 4.5A
ICE = 3A
ICE = 1.5A
TJ = 125
oC, L = 1mH, V
CE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C,
CAP
A
CIT
ANCE
(pF)
0
204060
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
CIES
COES
CRES
VGE, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
CE
,COLLECT
OR
T
O
EMITTER
V
O
L
T
A
G
E
(V)
2.3
2.5
DUTY CYCLE < 0.5%, TJ = 25
oC
PULSE DURATION = 250
s
ICE = 4.5A
ICE = 1.5A
ICE = 3A
12
45
I EC
,FOR
W
ARD
CURRENT
(A)
VEC, FORWARD VOLTAGE (V)
03
0
8
12
16
20
4
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%,
25oC
125oC
48
32
16
0
t rr
,RECO
VER
Y
TIMES
(ns)
IEC, FORWARD CURRENT (A)
1
64
40
24
8
23
56
4
125oC trr
dIEC/dt = 200A/s
25oC trr
25oC ta
25oC tb
125oC ta
125oC tb
HGT1S3N60A4DS, HGTP3N60A4D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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