参数资料
型号: HGTP3N60A4D_NL
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: IGBT 晶体管
英文描述: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-220AB
封装: LEAD FREE PACKAGE-3
文件页数: 9/9页
文件大小: 113K
代理商: HGTP3N60A4D_NL
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
Rev. H4
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
STAR*POWER is used under license
VCX
相关PDF资料
PDF描述
HGTP7N60A4_NL 600V SMPS Series N-Channel IGBT
HGXO0A-N-SM5-FREQ,10/40/-/M CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz - 50 MHz, CMOS OUTPUT
HGXO2F-N-50.0M,10/40/-/M CRYSTAL OSCILLATOR, CLOCK, 50 MHz, CMOS OUTPUT
HGXO2G-N-32.0M,10/40/-/M CRYSTAL OSCILLATOR, CLOCK, 32 MHz, CMOS OUTPUT
HGXO3A-N-460.0K,10/10/-/C CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz, CMOS OUTPUT
相关代理商/技术参数
参数描述
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HGTP3N60C3D 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube