- 您现在的位置：买卖IC网 > PDF目录296101 > HGTP3N60A4D_NL (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode PDF资料下载
参数资料
| 型号： | HGTP3N60A4D_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 113K |
| 代理商： | HGTP3N60A4D_NL |
2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG = 50,
L = 1mH,
Test Circuit (Figure 24)
-
5.5
8
ns
Current Rise Time
trI
-12
15
ns
Current Turn-Off Delay Time
td(OFF)I
-
110
165
ns
Current Fall Time
tfI
-
70
100
ns
Turn-On Energy (Note 2)
EON1
-37
-
J
Turn-On Energy (Note 2)
EON2
-
90
100
J
Turn-Off Energy (Note 3)
EOFF
-50
80
J
Diode Forward Voltage
VEC
IEC = 3A
-
2.25
-
V
Diode Reverse Recovery Time
trr
IEC = 3A, dIEC/dt = 200A/s
-
29
-
ns
IEC = 1A, dIEC/dt = 200A/s
-
19
-
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
1.8
oC/W
Diode
-
3.5
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specied in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is dened as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specications
TJ = 25
oC, Unless Otherwise Specied (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
I CE
,DC
COLLECT
OR
CURRENT
(A)
50
4
0
16
8
12
25
75
100
125
150
20
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
12
0
I CE
,COLLECT
O
R
T
O
EMITTER
CURRENT
(A)
4
300
400
200
100
500
600
0
16
20
8
TJ = 150
oC, R
G = 50, VGE = 15V, L = 200H
HGT1S3N60A4DS, HGTP3N60A4D
相关PDF资料 |
PDF描述 |
|---|---|
| HGTP7N60A4_NL | 600V SMPS Series N-Channel IGBT |
| HGXO0A-N-SM5-FREQ,10/40/-/M | CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz - 50 MHz, CMOS OUTPUT |
| HGXO2F-N-50.0M,10/40/-/M | CRYSTAL OSCILLATOR, CLOCK, 50 MHz, CMOS OUTPUT |
| HGXO2G-N-32.0M,10/40/-/M | CRYSTAL OSCILLATOR, CLOCK, 32 MHz, CMOS OUTPUT |
| HGXO3A-N-460.0K,10/10/-/C | CRYSTAL OSCILLATOR, CLOCK, 0.46 MHz, CMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3R4724 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60C3D | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。