参数资料
型号: HY5R256HC
英文描述: -|2.5V|8K|40|Direct RDRAM - 256M
中文描述: - |为2.5V | 8K的| 40 |直接RDRAM的- 256M
文件页数: 3/64页
文件大小: 4542K
代理商: HY5R256HC
Rev.0.9 / Dec.2000
3
Direct RDRAM
256/288-Mbit (512Kx16/18x32s) Preliminary
Table 2: Pin Description
Signal
I/O
Type
# Pins
center
Description
SIO1,SIO0
I/O
CMOS
a
2
Serial input/output. Pins for reading from and writing to the control
registers using a serial access protocol. Also used for power manage-
ment.
CMD
I
CMOS
a
1
Command input. Pins used in conjunction with SIO0 and SIO1 for
reading from and writing to the control registers. Also used for power
management.
SCK
I
CMOS
a
1
Serial clock input. Clock source used for reading from and writing to
the control registers
V
DD
24
Supply voltage for the RDRAM core and interface logic.
V
DDa
1
Supply voltage for the RDRAM analog circuitry.
V
CMOS
2
Supply voltage for CMOS input/output pins.
GND
28
Ground reference for RDRAM core and interface.
GNDa
2
Ground reference for RDRAM analog circuitry.
DQA8..DQA0
I/O
RSL
b
9
Data byte A. Nine pins which carry a byte of read or write data
between the Channel and the RDRAM. DQA8 is not used by
RDRAMs with a x16 organization.
CFM
I
RSL
b
1
Clock from master. Interface clock used for receiving RSL signals
from the Channel. Positive polarity.
CFMN
I
RSL
b
1
Clock from master. Interface clock used for receiving RSL signals
from the Channel. Negative polarity
V
REF
1
Logic threshold reference voltage for RSL signals
CTMN
I
RSL
b
1
Clock to master. Interface clock used for transmitting RSL signals to
the Channel. Negative polarity.
CTM
I
RSL
b
1
Clock to master. Interface clock used for transmitting RSL signals to
the Channel. Positive polarity.
RQ7..RQ5 or
ROW2..ROW0
I
RSL
b
3
Row access control. Three pins containing control and address infor-
mation for row accesses.
RQ4..RQ0 or
COL4..COL0
I
RSL
b
5
Column access control. Five pins containing control and address
information for column accesses.
DQB8..
DQB0
I/O
RSL
b
9
Data byte B. Nine pins which carry a byte of read or write data
between the Channel and the RDRAM. DQB8 is not used by
RDRAMs with a x16 organization.
Total pin count per package
92
a. All CMOS signals are high-true; a high voltage is a logic one and a low voltage is logic zero.
b. All RSL signals are low-true; a low voltage is a logic one and a high voltage is logic zero.
相关PDF资料
PDF描述
HY5R288HC -|2.5V|8K|40|Direct RDRAM - 288M
HY5V16CF 1Mx16|3.3V|4K|H|SDR SDRAM - 16M
HY5V16CF-H x16 SDRAM
HY5V16CF-S x16 SDRAM
HY6116-10 x8 SRAM
相关代理商/技术参数
参数描述
HY5S2B6DLF-BE 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM
HY5S2B6DLFP-BE 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM
HY5S2B6DLFP-SE 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM
HY5S2B6DLF-SE 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 16bits Synchronous DRAM
HY5S5B2BLF-6E 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M (8Mx32bit) Mobile SDRAM