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参数资料
| 型号： | IDT70V3599S166DR |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 15/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 166MHZ 208QFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 166MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 208-BFQFP |
| 供应商设备封装： | 208-PQFP（28x28） |
| 包装： | 托盘 |
| 其它名称： | 70V3599S166DR |
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read
( OE = V IL ) (2) t CYC2
t CH2 t CL2
CLK
CE 0
CE 1
t SC
t SB
t HC
t HB
BE n
t SW t HW
R/ W
t SW t HW
(3)
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA IN
t SA
t HA
t SD t HD
Dn + 2
DATA OUT
(1)
t CD2
Qn
t CKHZ
t CKLZ
t CD2
Qn + 3
READ
NOP
(4)
WRITE
READ
NOTES:
5617 drw 12
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE 0 , BE n , and ADS = V IL ; CE 1 and REPEAT = V IH . "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled) (2)
t CYC2
CLK
CE 0
t CH2
t CL2
CE 1
t SC
t SB
t HC
t HB
BE n
t SW t HW
R/ W
t SW t HW
(3)
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
t SA
t HA
t SD
t HD
DATA IN
(1)
t CD2
Dn + 2
Dn + 3
t CKLZ
t CD2
DATA OUT
Qn
(4)
Qn + 4
t OHZ
OE
NOTES:
READ
WRITE
READ
5617 drw 13
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE 0 , BE n , and ADS = V IL ; CE 1 and REPEAT = V IH .
3. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers are for reference
use only.
4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.
15
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70V3319S166PRF | IC SRAM 4MBIT 166MHZ 128TQFP |
| 356-006-525-101 | CARDEDGE 6POS .156 BLACK |
| 356-006-521-104 | CARDEDGE 6POS .156 BLACK |
| 356-006-521-102 | CARDEDGE 6POS .156 BLACK |
| 1-84953-8 | CONN FPC 18POS 1MM RT ANG SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V3599S166DRG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 166MHZ 208PQFP |
| IDT70V35L15PF | 功能描述:IC SRAM 144KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V35L15PF8 | 功能描述:IC SRAM 144KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70V35L15PFG | 功能描述:IC SRAM 144KBIT 15NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V35L15PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 144KBIT 15NS 100TQFP |
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