参数资料
型号: IDT70V3599S166DR
厂商: IDT, Integrated Device Technology Inc
文件页数: 6/23页
文件大小: 0K
描述: IC SRAM 4MBIT 166MHZ 208QFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 4.5M(128K x 36)
速度: 166MHz
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 208-BFQFP
供应商设备封装: 208-PQFP(28x28)
包装: 托盘
其它名称: 70V3599S166DR
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control (1,2,3,4)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
CLK
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
L
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
L
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
L
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
L
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , REPEAT = X.
3. OE is an asynchronous input signal.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II—Address Counter Control (1,2)
5617 tbl 02
Previous
Internal
L
L
External
Address
X
An
An
X
Internal
Address
X
X
Ap
Ap
Address
Used
An
An
Ap
Ap + 1
CLK
ADS
X
(4)
H
H
CNTEN
X
X
H
(5)
REPEAT (6)
L (4)
H
H
H
I/O (3)
D I/O (0)
D I/O (n)
D I/O (p)
D I/O (p+1)
MODE
Counter Reset to last valid ADS load
External Address Used
External Address Blocked —Counter disabled (Ap reused)
Counter Enabled —Internal Address generation
NOTES:
5617 tbl 03
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , BE n and OE .
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the date out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE 0 , CE 1 and BE n
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , BE n.
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS . This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
6.42
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