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参数资料
| 型号： | IDT70V5388S133BC8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 21/29页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 133MHZ 256BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 四端口，同步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70V5388S133BC8 |
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IDT70V5388/78
3.3V 64/32K x 18 Synchronous FourPort? Static RAM
Functional Description
The IDT70V5388/78 provides a true synchronous
FourPort Static RAM interface. Registered inputs provide
minimal set-up and hold times on address, data, and all
critical control inputs. All internal registers are clocked on
the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH
transition of the clock signal and the duration of the R/ W
input signal. This is done in order to offer the fastest
possible cycle times and highest data throughput. At 200
MHz, the device supports a cycle time of 5 ns, and provides
a pipelined data output of 3.0 ns from clock edge to data
valid. Four ports operating at 200 MHz, each with a bus
width of 18 bits, results in a data throughput rate of nearly
14 Gbps.
As a true synchronous device, the IDT70V5388/78
provides the flexibility to clock each port independently: the
ports may run at different frequencies and/or out of synchro-
nization with each other. As a true FourPort device, the
IDT70V5388/78 is capable of performing simultaneous
reads from all ports on the same address location. Care
should be taken when attempting to write and read address
locations simultaneously: the timing diagrams depict the
critical parameter t CCS , which determines the amount of
time needed to ensure that the write has successfully been
completed and so valid data is available for output. Violation
A 16 /A 15(1)
Industrial and Commercial Temperature Ranges
of t CCS may produce indeterminate data for the read. Two or
more ports attempting to write the same address location
simultaneously will result in indeterminate data recorded at
that address.
Each port is equipped with dual chip enables, CE 0
and CE 1 . A HIGH on CE 0 or a LOW on CE 1 for one clock
cycle on any port will power down the internal circuitry on
that port in order to reduce static power consumption. The
multiple chip enables also allow easier banking of multiple
IDT70V5388/78s for depth expansion configurations. One
cycle is required with chip enables reasserted to reactivate
the outputs.
Depth and Width Expansion
The IDT70V5388/78 features dual chip enables
(refer to Truth Table I) in order to facilitate rapid and simple
depth expansion with no requirements for external logic.
Figure 4 illustrates how to control the various chip enables
in order to expand two devices in depth.
The IDT70V5388/78 can also be used in applica-
tions requiring expanded width, as indicated in Figure 3.
Through combining the control signals, the devices can be
grouped as necessary to accommodate applications re-
quiring 36-bits or wider.
IDT70V5388/78
CE 0
IDT70V5388/78
CE 0
Control Inputs
CE 1
V DD
Control Inputs
CE 1
V DD
IDT70V5388/78
CE 1
IDT70V5388/78
CE 1
Control Inputs
CE 0
Control Inputs
CE 0
UB , LB
R/ W ,
OE ,
CLK,
CNTLD ,
Figure 3. Depth and Width Expansion with IDT70V5388/78
NOTE:
1. A 16 is for IDT70V5388, A 15 is for IDT70V5378.
21
6.42
CNTRST ,
CNTINC
5649 drw 21
,
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相关代理商/技术参数 |
参数描述 |
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| IDT70V5388S133BG | 功能描述:IC SRAM 1.125MBIT 133MHZ 272BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S133BG8 | 功能描述:IC SRAM 1.125MBIT 133MHZ 272BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S166BC | 功能描述:IC SRAM 1.125MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S166BC8 | 功能描述:IC SRAM 1.125MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S166BCI | 功能描述:IC SRAM 1.125MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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