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参数资料
| 型号： | IDT70V5388S133BC8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 28/29页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 133MHZ 256BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 四端口，同步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70V5388S133BC8 |
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IDT70V5388/78
3.3V 64/32K x 18 Synchronous FourPort? Static RAM
Identification Register Definitions
Industrial and Commercial Temperature Ranges
0x31D
Instruction Field
Revision Number (31:28)
IDT Device ID (27:12)
IDT JEDEC ID (11:1)
ID Register Indicator Bit (Bit 0)
NOTE:
1. Device ID for IDT70V5378 is 0x31E.
Scan Register Sizes
Register Name
Instruction (IR)
MBIST Mode Select Register (MSR)
Bypass (BYR)
Identification (IDR)
Boundary Scan (BSR)
MBIST Result (MRR)
Value
0x0
(1)
0x33
1
Bit Size
4
2
1
32
392 Note (3)
26
Description
Reserved for version number
Defines IDT part number
Allows unique identification of device vendor as IDT
Indicates the presence of an ID register
5649 tbl 15
System Interface Parameters
5649 tbl 16
Instruction
EXTEST
BYPASS
IDCODE
HIGHZ
SAMPLE/PRELOAD
MBIST_MODE_SELECT
RUNBIST
INT_SCAN
CLAMP
RESERVED
PRIVATE
Code
0000
1111
0111
0110
0001
1010
1000
0100
0101
0010, 0011
1001, 1011, 1100, 1101, 1110
Description
Forces contents of the boundary scan cells onto the device outputs (1) .
Places the boundary scan register (BSR) between TDI and TDO.
Places the b ypass register (BYR) between TDI and TDO.
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
Places the bypass register (BYR) b etween TDI and TDO. Forces all
device output drivers to a High-Z state.
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs (2) to be captured in the
boundary scan cells and shifted serially through TDO. PRELOAD allows
data to be input serially into the boundary scan cells via the TDI.
Places the MBIST Mode Register between TDI and TDO. A value of '00'
written into this register will allow MBIST to run in standard memory test
mode, outputting valid results as appropriate via the MBIST Result
Register. A value of '11' written into the MBIST Mode Register will force
the MBIST Result Register (MRR) to report a result of 'FAIL'., with 8E0000
failed read cycles noted (i.e., the MRR content = (8E0000h, 0, x). The
value of the MBIST Mode Register is no t guaranteed at power-up and is
not affected b y Master reset and JTAG reset.
Invokes MBIST. Internally updates MBIST result register with Go-NoGo
information and number of issues. PROGRAM_MBIST_MODE_REGISTER
must be run prior to executing RUNBIST in order to ensure valid results.
There is no need to repeat this instructio n unless the mode of operation
is changed: the MMR will re tain its programmed value until overwritten or
the device is powered down.
Scans out partial information. Places MBIST result register (MRR)
between TDI & TDO.
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the Bypass reg ister (BYR) between TDI & TDO.
Several combinations are reserved. Do not use codes other than those
identified above.
Several combinations arePRIVATE (for IDT internal use). Do not use
codes other than those identified above.
5649 tbl 17
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST .
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
28
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V5388S133BG | 功能描述:IC SRAM 1.125MBIT 133MHZ 272BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S133BG8 | 功能描述:IC SRAM 1.125MBIT 133MHZ 272BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S166BC | 功能描述:IC SRAM 1.125MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S166BC8 | 功能描述:IC SRAM 1.125MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V5388S166BCI | 功能描述:IC SRAM 1.125MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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