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参数资料
| 型号： | IPB80N04S2L-03 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 8/8页 |
| 文件大小： | 163K |
| 代理商： | IPB80N04S2L-03 |
IPB80N04S2L-03
IPP80N04S2L-03
Published by
Infineon Technologies AG
St.-Martin-Strae 53
D-81541 München
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-02
相关PDF资料 |
PDF描述 |
|---|---|
| IPB80N06S3L-06 | OptiMOS㈢-T Power-Transistor |
| IPB80N06S3L-08 | OptiMOS㈢-T Power-Transistor |
| IPB80N08S2-07 | OptiMOS㈢ Power-Transistor |
| IPB80N08S2L-07 | OptiMOS㈢ Power-Transistor |
| IPB80P03P3L-04 | OptiMOS-P Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80N04S2L03ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 40V 80A TO263-3 |
| IPB80N04S303 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N04S3-03 | 功能描述:MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 80A 3.2mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N04S303ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 40V 80A TO263-3 |
| IPB80N04S304 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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