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参数资料
| 型号： | IRF1010ZL |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | PLASTIC, TO-262, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 399K |
| 代理商： | IRF1010ZL |
07/06/10
www.irf.com
1
HEXFET Power MOSFET
VDSS = 55V
RDS(on) = 7.5m
ID = 75A
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Features
IRF1010ZPbF
IRF1010ZSPbF
IRF1010ZLPbF
D2Pak
IRF1010ZSPbF
TO-220AB
IRF1010ZPbF
TO-262
IRF1010ZLPbF
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.11
°C/W
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
180
130
See Fig.12a, 12b, 15, 16
140
0.90
± 20
Max.
94
66
360
75
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
PD - 95361A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF1010ZLPBF | 功能描述:MOSFET MOSFT 55V 94A 7.5mOhm 63nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF1010ZPBF | 功能描述:MOSFET MOSFT 55V 94A 7.5mOhm 63nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF1010ZS | 功能描述:MOSFET N-CH 55V 75A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF1010ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 94A 3-Pin(2+Tab) D2PAK |
| IRF1010ZSPBF | 功能描述:MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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