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| 型号： | IRF530 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 100V，14A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate）(100V，14A TMOS功率场效应管（N沟道增强型硅门）) |
| 中文描述： | 14 A, 100 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 166K |
| 代理商： | IRF530 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Product Preview
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating area
are critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Single Pulse (tp ≤ 50 mS)
VGS
VGSM
±20
±25
Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 mS)
ID
IDM
14
10
49
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
78
0.63
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W)
EAS
98
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case
°
Thermal Resistance — Junction–to–Ambient
°
R
θJC
R
θJA
1.60
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
275
°C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 1
Order this document
by IRF530/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
IRF530
TMOS POWER FET
14 AMPERES
100 VOLTS
RDS(on) = 0.140 W
D
S
G
CASE 221A–09
TO-220AB
Motorola, Inc. 1998
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF-530 | 制造商:International Rectifier 功能描述: |
| IRF530/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF530_R4941 | 功能描述:MOSFET USE 512-IRF530A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5305 | 功能描述:MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5305L | 功能描述:MOSFET P-CH 55V 31A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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