参数资料
型号: IRF530
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 100V,14A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate)(100V,14A TMOS功率场效应管(N沟道增强型硅门))
中文描述: 14 A, 100 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 8/8页
文件大小: 166K
代理商: IRF530
IRF530
8
Motorola TMOS Power MOSFET Transistor Device Data
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IRF530/D
相关PDF资料
PDF描述
IRF533 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
IRF531 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
IRF532 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
IRF540 100V,27A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate)(100V,27A TMOS功率场效应管(N沟道增强型硅门))
IRF620-009 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
IRF-530 制造商:International Rectifier 功能描述:
IRF530/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement-Mode Silicon Gate
IRF530_R4941 功能描述:MOSFET USE 512-IRF530A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF5305 功能描述:MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF5305L 功能描述:MOSFET P-CH 55V 31A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件