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参数资料
| 型号： | IRF530NS |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 17A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 37nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRF530NS |
HEXFET Power MOSFET
PD - 91352B
IRF530NS
IRF530NL
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
S
V DSS = 100V
R DS(on) = 90m ?
I D = 17A
Description
Advanced HEXFET ? Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF530NS
Max.
TO-262
IRF530NL
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
17
12
60
3.8
70
0.47
± 20
9.0
7.0
7.4
A
W
W
W/°C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
–––
–––
2.15
40
°C/W
www.irf.com
1
09/04/02
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF530NSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK |
| IRF530NSPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF530NSTRL | 制造商:International Rectifier 功能描述: |
| IRF530NSTRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK T/R |
| IRF530NSTRLPBF | 功能描述:MOSFET MOSFT 100V 17A 90mOhm 24.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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