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参数资料
| 型号： | IRF530NS |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 17A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 37nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRF530NS |
IRF530NS/IRF530NL
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.11
–––
––– V/°C
90 m ?
Reference to 25°C, I D = 1mA ?
V GS = 10V, I D = 9.0A ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 50V, I D = 9.0A ??
25 V DS = 100V, V GS = 0V
μA
250 V DS = 80V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
37 I D = 9.0A
7.2 nC V DS = 80V
––– R G = 12 ?
Q gd
t d(on)
t r
t d(off)
t f
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
9.2
22
35
25
11 V GS = 10V, See Fig. 6 and 13
––– V DD = 50V
––– I D = 9.0A
ns
––– V GS = 10V, See Fig. 10 ??
?
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
E AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy ??
––– 920
––– 130
––– 19
––– 340 ?
––– V GS = 0V
––– V DS = 25V
––– pF ? = 1.0MHz, See Fig. 5 ?
93 ? mJ I AS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
A
integral reverse
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
MOSFET symbol
––– ––– 17
showing the
G
––– ––– 60
p-n junction diode.
––– ––– 1.3 V T J = 25°C, I S = 9.0A, V GS = 0V ?
D
S
t rr
Q rr
t on
Notes:
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– 93 140 ns T J = 25°C, I F = 9.0A
––– 320 480 nC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
? Starting T J = 25°C, L = 2.3mH
R G = 25 ? , I AS = 9.0A, V GS =10V (See Figure 12)
? I SD ≤ 9.0A , di/d t ≤ 410A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175°C .
? Uses IRF530N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
www.irf.com
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