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参数资料
| 型号： | IRFS3507TRLPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 97A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 97A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.8 毫欧 @ 58A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3540pF @ 50V |
| 功率 - 最大： | 190W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRFB/S/SL3507PbF
Static @ T J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75
–––
–––
2.0
––– –––
0.070 –––
7.0 8.8
––– 4.0
V V GS = 0V, I D = 250μA
V/°C Reference to 25°C, I D = 1mA
m ? V GS = 10V, I D = 58A
V V DS = V GS , I D = 100μA
I DSS
Drain-to-Source Leakage Current
–––
––– 20
μA
V DS = 75V, V GS = 0V
–––
––– 250
V DS = 75V, V GS = 0V, T J = 125°C
I GSS
R G
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
–––
–––
–––
––– 200
––– -200
1.3 –––
nA
?
V GS = 20V
V GS = -20V
f = 1MHz, open drain
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
86
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
88
24
36
20
81
52
49
3540
340
210
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
V DS = 50V, I D = 58A
I D = 58A
V DS = 60V
V GS = 10V
V DD = 48V
I D = 58A
R G = 5.6 ?
V GS = 10V
V GS = 0V
V DS = 50V
? = 1.0MHz
C oss eff. (ER)
Effective Output Capacitance (Energy Related) –––
460
–––
V GS = 0V, V DS = 0V to 60V
, See Fig.11
C oss eff. (TR)
Effective Output Capacitance (Time Related)
–––
520
–––
V GS = 0V, V DS = 0V to 60V
, See Fig. 5
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
97
A
MOSFET symbol
D
(Body Diode)
showing the
I SM
Pulsed Source Current
–––
–––
390
A
integral reverse
G
(Body Diode)
p-n junction diode.
S
V SD
t rr
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1.3 V
––– 37 56 ns
––– 45 68
T J = 25°C, I S = 58A, V GS = 0V
T J = 25°C V R = 64V,
T J = 125°C I F = 58A
Q rr
Reverse Recovery Charge
––– 32 48 nC
T J = 25°C
di/dt = 100A/μs
––– 51 77
T J = 125°C
I RRM
Reverse Recovery Current
––– 1.7 ––– A
T J = 25°C
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
? Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
? Repetitive rating; pulse width limited by max. junction
temperature.
? Limited by T Jmax , starting T J = 25°C, L = 0.17mH,
R G = 25 ? , I AS = 58A, V GS =10V. Part not recommended for use
above this value.
? I SD ≤ 58A, di/dt ≤ 390A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C.
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
? C oss eff. (TR) is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS .
? C oss eff. (ER) is a fixed capacitance that gives the same energy as
C oss while V DS is rising from 0 to 80% V DSS .
? When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
? R θ is measured at T J approximately 90°C.
www.irf.com
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