参数资料
型号: IRFS3507TRLPBF
厂商: International Rectifier
文件页数: 5/12页
文件大小: 0K
描述: MOSFET N-CH 75V 97A D2PAK
标准包装: 800
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 97A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.8 毫欧 @ 58A,10V
Id 时的 Vgs(th)(最大): 4V @ 100µA
闸电荷(Qg) @ Vgs: 130nC @ 10V
输入电容 (Ciss) @ Vds: 3540pF @ 50V
功率 - 最大: 190W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)
IRFB/S/SL3507PbF
10
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
τ J
τ J
τ 1
τ 1
R 1
R 1
τ 2
R 2
R 2
τ 2
τ C
τ
Ri (°C/W) τ i (sec)
0.2963 0.000504
0.4738 0.013890
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τ i / Ri
Ci i / Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
100
Duty Cycle = Single Pulse
0.01
pulsewidth, tav, assuming ? Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ?Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
0
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 58A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T jmax . This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither T jmax nor I av (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I av = Allowable avalanche current.
7. ? T = Allowable rise in junction temperature, not to exceed T jmax (assumed as
25°C in Figure 14, 15).
t av = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
Z thJC (D, t av ) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
I av = 2 D T/ [1.3·BV·Z th ]
E AS (AR) = P D (ave) ·t av
5
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