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参数资料
型号： IRGIB10B60KD1
厂商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 绝缘栅双极型晶体管，超快软恢复二极管
文件页数： 2/12页
文件大小： 386K
代理商： IRGIB10B60KD1
IRGIB10B60KD1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
2
www.irf.com
Vcc =80% (V
CES
), V
GE
= 20V, L =100μH, R
G
= 50
.
Energy losses include "tail" and diode reverse recovery.
Min.
600
—
1.50
—
—
3.5
—
—
—
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.99
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
1.70
2.10
I
C
= 10A, V
GE
= 15V, T
J
= 25°C
2.05
2.35
V
I
C
= 10A, V
GE
= 15V, T
J
= 150°C
2.06
2.35
I
C
= 10A, V
GE
= 15V, T
J
= 175°C
4.5
5.5
V
V
CE
= V
GE
, I
C
= 250μA
-10
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
5.0
—
S
V
CE
= 50V, I
C
= 10A, PW = 80μs
1.0
150
V
GE
= 0V, V
CE
= 600V
90
250
μA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
150
400
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
1.80
2.40
V
I
F
= 5.0A, V
GE
= 0V
1.32
1.74
I
F
= 5.0A, V
GE
= 0V, T
J
= 150°C
1.23
1.62
I
F
= 5.0A, V
GE
= 0V, T
J
= 175°C
—
±100
nA
V
GE
= ±20V, V
CE
= 0V
V
GE
= 0V, I
C
= 500μA
V
CE(on)
Collector-to-Emitter Voltage
V
GE(th)
V
GE(th)
/
T
J
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
41
62
4.6
6.9
19
29
156
264
165
273
321
434
25
33
24
34
180
250
62
87
261
372
313
425
574
694
22
31
24
34
240
340
48
67
7.5
—
610
915
66
99
23
35
Conditions
I
C
= 10A
V
CC
= 400V
V
GE
= 15V
I
C
= 10A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 50
, L = 1.07mH
Ls= 150nH, T
J
= 25°C
I
C
= 10A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 50
, L = 1.1mH
Ls= 150nH, T
J
= 25°C
nC
I
C
= 10A, V
CC
= 400V
V
GE
= 15V, R
G
= 50
, L = 1.07mH
Ls= 150nH, T
J
= 150°C
I
C
= 8.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 50
, L = 1.07mH
Ls= 150nH, T
J
= 150°C
μJ
nH
Measured 5 mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 32A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 50
T
J
= 150°C, Vp = 600V, R
G
= 50
V
CC
=360V,V
GE
= +15V to 0V
pF
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
I
SC (PEAK)
E
rec
t
rr
I
rr
Q
rr
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
—
—
—
—
—
100
99
79
14
553
—
128
103
18
719
A
μJ
ns
A
nC
T
J
= 150°C
V
CC
= 400V, I
F
= 10A, L = 1.07mH
V
GE
= 15V, R
G
= 50
di/dt = 500A/μs
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