参数资料
型号: IRGIB10B60KD1
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 绝缘栅双极型晶体管,超快软恢复二极管
文件页数: 7/12页
文件大小: 386K
代理商: IRGIB10B60KD1
IRGIB10B60KD1
www.irf.com
7
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 150°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 150°C; I
F
= 10A
Fig. 20
- Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V;T
J
= 150°C
Fig. 19
- Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
I
CE
= 10A; T
J
= 150°C
0
100
200
300
400
500
RG (
)
0
2
4
6
8
10
12
14
16
IR
0
200
400
600
diF /dt (A/μs)
0
2
4
6
8
10
12
14
16
IR
0
5
10
15
20
IF (A)
0
5
10
15
IR
RG = 470
RG =50
RG =150
RG =270
0
100
200
300
400
500
600
diF /dt (A/μs)
0
200
400
600
800
1000
QR
50
150
270
470
20A
10A
5.0A
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