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参数资料
| 型号： | IRGIB10B60KD1 |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 5/12页 |
| 文件大小： | 386K |
| 代理商： | IRGIB10B60KD1 |
IRGIB10B60KD1
www.irf.com
5
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 5.0A
ICE = 10A
ICE = 20A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 5.0A
ICE = 10A
ICE = 20A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 5.0A
ICE = 10A
ICE = 20A
0
5
10
15
20
VGE (V)
0
10
20
30
40
50
60
70
80
90
100
IC
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGIB10B60KD1P | 功能描述:IGBT 晶体管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGIB10B60KD1PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB15B60KD1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB15B60KD1P | 功能描述:IGBT 晶体管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGIB6B60KD | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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