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参数资料
| 型号： | IRGIB10B60KD1 |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 6/12页 |
| 文件大小： | 386K |
| 代理商： | IRGIB10B60KD1 |
IRGIB10B60KD1
6
www.irf.com
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L=1.07mH; V
CE
= 400V
R
G
= 50
; V
GE
= 15V
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L=1.07mH; V
CE
= 400V
R
G
= 50
; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L=1.07mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L=1.07mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
0
5
10
15
20
IC (A)
0
100
200
300
400
500
600
700
E
EOFF
EON
0
100
200
300
400
500
RG (
)
0
200
400
600
800
1000
E
EON
EOFF
0
5
10
15
20
IC (A)
1
10
100
1000
S
tR
tdOFF
tF
tdON
0
100
200
300
400
500
RG (
)
10
100
1000
10000
S
tR
tdON
tdOFF
tF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGIB10B60KD1P | 功能描述:IGBT 晶体管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGIB10B60KD1PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB15B60KD1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB15B60KD1P | 功能描述:IGBT 晶体管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGIB6B60KD | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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