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参数资料
| 型号： | IRGP35B60PD |
| 厂商： | International Rectifier |
| 英文描述： | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | WARP2系列IGBT与超快软恢复二极管 |
| 文件页数： | 2/10页 |
| 文件大小： | 287K |
| 代理商： | IRGP35B60PD |
IRGP35B60PD
2
www.irf.com
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ./ I
C
, where V
CE(on)
typ.= 1.85V and I
C
=22A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 μH, R
G
= 22
.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
R
G
Internal Gate Resistance
Min.
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
0.78
1.7
1.85
2.25
2.37
3.00
4.0
-10
36
3.0
0.35
1.30
1.20
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 500μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
—
1MHz, Open Collector
2.15
I
C
= 22A, V
GE
= 15V
2.55
V
I
C
= 35A, V
GE
= 15V
2.80
I
C
= 22A, V
GE
= 15V, T
J
= 125°C
3.45
I
C
= 35A, V
GE
= 15V, T
J
= 125°C
5.0
V
I
C
= 250μA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
—
S
V
CE
= 50V, I
C
= 22A, PW = 80μs
375
μA
V
GE
= 0V, V
CE
= 600V
—
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
1.70
V
I
F
= 15A, V
GE
= 0V
1.60
I
F
= 15A, V
GE
= 0V, T
J
= 125°C
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig
4, 5,6,8,9
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
7,8,9
V
FM
Diode Forward Voltage Drop
10
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
C
oes
eff.
Effective Output Capacitance (Time Related)
C
oes
eff. (ER)
Effective Output Capacitance (Energy Related)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
160
55
21
220
215
435
26
6.0
110
8.0
410
330
740
26
8.0
130
12
3715
265
47
135
179
Max. Units
240
83
32
270
265
535
34
8.0
122
10
465
405
870
34
11
150
16
—
—
—
—
—
Ref.Fig
I
C
= 22A
V
CC
= 400V
V
GE
= 15V
I
C
= 22A, V
CC
= 390V
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 25°C
I
C
= 22A, V
CC
= 390V
ns
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 25°C
17
nC
CT1
CT3
μJ
CT3
I
C
= 22A, V
CC
= 390V
μJ
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 125°C
I
C
= 22A, V
CC
= 390V
ns
V
GE
= +15V, R
G
= 3.3
, L = 200μH
T
J
= 125°C
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
V
GE
= 0V, V
CE
= 0V to 480V
16
pF
15
T
J
= 150°C, I
C
= 120A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
T
J
= 25°C
I
F
= 15A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
T
J
= 25°C
I
F
= 15A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
T
J
= 25°C
I
F
= 15A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
t
rr
Diode Reverse Recovery Time
—
—
—
—
—
—
42
74
80
220
4.0
6.5
60
120
180
600
6.0
10
ns
19
Q
rr
Diode Reverse Recovery Charge
nC
21
I
rr
Peak Reverse Recovery Current
A
19,20,21,22
CT5
Conditions
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