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参数资料
| 型号： | IRGPS40B120UD |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 40A I(C) | TO-247VAR |
| 中文描述： | 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 40A条一（c）|至247VAR |
| 文件页数： | 1/12页 |
| 文件大小： | 117K |
| 代理商： | IRGPS40B120UD |
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Benefits
Benchmark Efficiency for Motor Control.
V
CES
= 1200V
V
CE(on)
typ. = 3.12V
@ V
GE
= 15V,
I
CE
= 40A, Tj=25°C
01/17/02
Absolute Maximum Ratings
Parameter
Max.
1200
80
40
160
160
80
40
160
± 20
595
238
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
www.irf.com
1
Rugged Transient Performance.
Low EMI.
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation.
E
G
C
N-channel
Parameter
Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.83
–––
40
–––
–––
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
°
C/W
N(kgf)
g (oz)
nH
Wt
Le
Thermal Resistance
Super
-
247
UltraFast Co-Pack IGBT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGPS40B120UDP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGPS40B120UP | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPS40B120UPBF | 功能描述:IGBT 晶体管 1200V UltraFast 8-25kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGPS60B120KD | 制造商:International Rectifier 功能描述: |
| IRGPS60B120KDP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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