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参数资料
| 型号： | IRGPS40B120UD |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 40A I(C) | TO-247VAR |
| 中文描述： | 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 40A条一（c）|至247VAR |
| 文件页数： | 2/12页 |
| 文件大小： | 117K |
| 代理商： | IRGPS40B120UD |
IRGPS40B120UD
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Ref.Fig.
5, 6
7, 9
10
11
9,10
11 ,12
Min. Typ. Max. Units
1200
–––
–––
0.40
–––
3.12
–––
3.39
–––
3.88
–––
4.24
4.0
5.0
-12
–––
30.5
–––
–––
–––
420 1200
–––
2.03
–––
2.17
–––
2.26
–––
2.46
–––
–––
±100
Conditions
–––
–––
3.40
3.70
4.30
4.70
6.0
–––
mV/
°
C
–––
500
V
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25
°
C-125
°
C)
I
C
= 40A
I
C
= 50A
I
C
= 40A, T
J
= 125
°
C
I
C
= 50A, T
J
= 125
°
C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25
°
C-125
°
C)
V
CE
= 50V, I
C
= 40A, PW=80μs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125
°
C
I
C
= 40A
I
C
= 50A
I
C
= 40A, T
J
= 125
°
C
I
C
= 50A, T
J
= 125
°
C
V
GE
= ±20V
V/
°
C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
–––
Forward Transconductance
Zero Gate Voltage Collector Current
S
μA
V
FM
Diode Forward Voltage Drop
2.40
2.60
2.68
2.95
V
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Gate-to-Emitter Leakage Current
nA
8
Ref.Fig.
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
340
–––
40
–––
165
–––
1400 1750
–––
1650 2050
–––
3050 3800
–––
1950 2300
–––
2200 2950
–––
4150 5250
–––
76
–––
39
–––
332
–––
25
–––
4300
–––
–––
330
–––
160
Conditions
510
60
248
I
C
= 40A
V
CC
= 600V
V
GE
= 15V
I
C
= 40A, V
CC
= 600V
V
GE
= 15V,R
G
= 4.7
,
L =200μH
Ls = 150nH
nC
μJ
T
J
= 25
°
C
T
J
= 125
°
C
μJ
Energy losses include "tail" and
diode reverse recovery.
I
C
= 40A, V
CC
= 600V
V
GE
= 15V, R
G
= 4.7
L =200μH
Ls = 150nH, T
J
= 125
°
C
99
55
365
33
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150
°
C, I
C
= 160A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7
T
J
= 150
°
C, Vp =1200V
V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7
T
J
= 125
°
C
V
CC
= 600V, I
F
= 60A, L =200μH
V
GE
= 15V,R
G
= 4.7
,
Ls = 150nH
–––
–––
pF
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
–––
3346
–––
–––
180
–––
50
μJ
ns
A
–––
–––
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
μs
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