参数资料
型号: IRGPS40B120UD
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 40A I(C) | TO-247VAR
中文描述: 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 40A条一(c)|至247VAR
文件页数: 12/12页
文件大小: 117K
代理商: IRGPS40B120UD
IRGPS40B120UD
12
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
01/02
Super-247
Package Outline
B
1.60 [.063]
MAX.
1
2
0.25 [.010]
B A
3
0.13 [.005]
2.35 [.092]
1.65 [.065]
2.15 [.084]
1.45 [.058]
5.50 [.216]
4.50 [.178]
E
E
3X1.45 [.058]
16.10 [.632]
15.10 [.595]
20.80 [.818]
19.80 [.780]
14.80 [.582]
13.80 [.544]
4.25 [.167]
3.85 [.152]
5.45 [.215]
1.30 [.051]
0.70 [.028]
13.90 [.547]
13.30 [.524]
16.10 [.633]
15.50 [.611]
4
0.25 [.010]
B A
4
3.00 [.118]
2.00 [.079]
A
2X R
SECTION E-E
2X
1.30 [.051]
1.10 [.044]
3X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-274AA
NOTES:
3 - SOURCE
4 - DRAIN
2 - DRAIN
1 - GATE
3 - EMITTER
4 - COLLECTOR
1 - GATE
2 - COLLECTOR
LEAD ASSIGNMENTS
MOSFET
IGBT
C
相关PDF资料
PDF描述
IRGS14B40L TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | 18A I(C) | TO-252VAR
IRGTDN100M12 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C)
IRGTDN150K06 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 170A I(C)
IRGTDN150M06 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)
IRGTDN150M12 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 280A I(C)
相关代理商/技术参数
参数描述
IRGPS40B120UDP 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGPS40B120UP 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRGPS40B120UPBF 功能描述:IGBT 晶体管 1200V UltraFast 8-25kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGPS60B120KD 制造商:International Rectifier 功能描述:
IRGPS60B120KDP 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube