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参数资料
| 型号： | IS61LF51218D-8.5TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 8.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 1/21页 |
| 文件大小： | 148K |
| 代理商： | IS61LF51218D-8.5TQ |
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
PRELIMINARY INFORMATION
Rev. 00A
04/17/01
IS61SF25632T/D
IS61LF25632T/D
IS61SF25636T/D
IS61LF25636T/D
IS61SF51218T/D
IS61LF51218T/D
ISSI
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Pentium or linear burst sequence control using
MODE input
Three chip enable option for simple depth expansion
and address pipelining
Common data inputs and data outputs
JEDEC 100-Pin TQFP and
119-pin PBGA package
Single +3.3V, +10%, –5% power supply
Power-down snooze mode
3.3V I/O for SF
2.5V I/O for LF
Snooze MODE for reduced-power standby
T version (three chip selects)
D version (two chip selects)
256K x 32, 256K x 36, 512K x 18
SYNCHRONOUS FLOW-THROUGH
STATIC RAM
PRELIMINARY INFORMATION
NOVEMBER 2000
FAST ACCESS TIME
Symbol
Parameter
-8*
-8.5
-9
-10
Units
tKQ
Clock Access Time
8
8.5
9
10
ns
tKC
Cycle Time
10
11
15
ns
Frequency
100
90
66
MHz
*This speed available only in SF version
DESCRIPTION
The
ISSI IS61SF25632, IS61SF25636, IS61SF51218,
IS61LF25632, IS61LF25636, and IS61LF51218 are high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, secondary cache for the
Pentium, 680X0, and PowerPC microprocessors.
The IS61SF25632 and IS61LF25632 are organized as
262,144 words by 32 bits and the IS61SF25636 and
IS61LF25636 are organized as 262,144 words by 36 bits.
The IS61SF51218 and IS61LF51218 are organized as
524,288 words by 18 bits. Fabricated with
ISSI's advanced
CMOS technology, the device integrates a 2-bit burst
counter, high-speed SRAM core, and high-drive capability
outputs into a single monolithic circuit. All synchronous
inputs pass through registers that are controlled by a
positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (
BWE).input combined with one or more individual
byte write signals (
BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP (Address Status
Processor) or
ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LPD25636A-200B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LF51236A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2I | 功能描述:静态随机存取存储器 18M (512Kx36) 6.5ns Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LF51236A-6.5B2I-TR | 功能描述:静态随机存取存储器 18M (512Kx36) 6.5ns Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LF51236A-6.5B2LI | 功能描述:静态随机存取存储器 18M (512Kx36) 6.5ns Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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