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参数资料
| 型号： | IS61LF51218D-8.5TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 8.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 21/21页 |
| 文件大小： | 148K |
| 代理商： | IS61LF51218D-8.5TQ |
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
PRELIMINARY INFORMATION
Rev. 00A
04/17/01
IS61SF25632T/D
IS61LF25632T/D
IS61SF25636T/D
IS61LF25636T/D
IS61SF51218T/D
IS61LF51218T/D
ISSI
PARTIAL TRUTH TABLE
Function
GW
BWE
BWa
BWb
BWc
BWd
Read
H
XXXX
Read
H
L
HHHH
Write Byte 1
H
L
H
Write All Bytes
H
LLLLL
Write All Bytes
L
XXXXX
TRUTH TABLE
Address
Operation
Used
CE
CE2
ADSP ADSC
ADV WRITE
OE
DQ
Deselected, Power-down
None
H
X
L
X
High-Z
Deselected, Power-down
None
L
X
H
L
X
High-Z
Deselected, Power-down
None
L
X
L
X
High-Z
Deselected, Power-down
None
L
X
H
L
X
High-Z
Deselected, Power-down
None
L
X
H
L
X
High-Z
Read Cycle, Begin Burst
External
L
H
L
X
Q
Read Cycle, Begin Burst
External
L
H
L
H
L
X
Read
X
Q
Write Cycle, Begin Burst
External
L
H
L
H
L
X
Write
X
D
Read Cycle, Continue Burst
Next
X
H
L
Read
L
Q
Read Cycle, Continue Burst
Next
X
H
L
Read
H
High-Z
Read Cycle, Continue Burst
Next
H
X
H
L
Read
L
Q
Read Cycle, Continue Burst
Next
H
X
H
L
Read
H
High-Z
Write Cycle, Continue Burst
Next
X
H
L
Write
X
D
Write Cycle, Continue Burst
Next
H
X
H
L
Write
X
D
Read Cycle, Suspend Burst
Current
X
H
Read
L
Q
Read Cycle, Suspend Burst
Current
X
H
Read
H
High-Z
Read Cycle, Suspend Burst
Current
H
X
H
Read
L
Q
Read Cycle, Suspend Burst
Current
H
X
H
Read
H
High-Z
Write Cycle, Suspend Burst
Current
X
H
Write
X
D
Write Cycle, Suspend Burst
Current
H
X
H
Write
X
D
相关PDF资料 |
PDF描述 |
|---|---|
| IS61LPD25636A-200B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD25636A-200TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LF51236A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF51236A-6.5B2I | 功能描述:静态随机存取存储器 18M (512Kx36) 6.5ns Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LF51236A-6.5B2I-TR | 功能描述:静态随机存取存储器 18M (512Kx36) 6.5ns Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LF51236A-6.5B2LI | 功能描述:静态随机存取存储器 18M (512Kx36) 6.5ns Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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