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参数资料
| 型号： | ISL12022MIBZ-EVAL |
| 厂商： | Intersil |
| 文件页数： | 29/31页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR ISL12022MIBZ |
| 应用说明： | Addressing Power Issues in Real Time Clock Appls |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 1 |
| 系列： | * |
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ISL12022M
7
FN6668.9
June 20, 2012
tSU:STA
START Condition Setup Time
SCL rising edge to SDA falling
edge. Both crossing 70% of
VDD.
600
ns
tHD:STA
START Condition Hold Time
From SDA falling edge
crossing 30% of VDD to SCL
falling edge crossing 70% of
VDD.
600
ns
tSU:DAT
Input Data Setup Time
From SDA exiting the 30% to
70% of VDD window, to SCL
rising edge crossing 30% of
VDD.
100
ns
tHD:DAT
Input Data Hold Time
From SCL falling edge
crossing 30% of VDD to SDA
entering the 30% to 70% of
VDD window.
20
900
ns
tSU:STO
STOP Condition Setup Time
From SCL rising edge
crossing 70% of VDD, to SDA
rising edge crossing 30% of
VDD.
600
ns
tHD:STO
STOP Condition Hold Time
From SDA rising edge to SCL
falling edge. Both crossing
70% of VDD.
600
ns
tDH
Output Data Hold Time
From SCL falling edge
crossing 30% of VDD, until
SDA enters the 30% to 70%
of VDD window.
0
ns
tR
SDA and SCL Rise Time
From 30% to 70% of VDD.
20 + 0.1 x Cb
300
ns
tF
SDA and SCL Fall Time
From 70% to 30% of VDD.
20 + 0.1 x Cb
300
ns
Cb
Capacitive Loading of SDA or SCL
Total on-chip and off-chip
10
400
pF
RPU
SDA and SCL Bus Pull-up Resistor
Off-chip
Maximum is determined by
tR and tF.
For Cb = 400pF, max is about
2k~2.5k.
For Cb = 40pF, max is about
15k~20k
1
k
NOTES:
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
8. Specified at +25°C.
9. Temperature Conversion is inactive below VBAT = 2.7V. Device operation is not guaranteed at VBAT <1.8V.
10. IRQ/FOUT inactive.
11. VDD > VBAT +VBATHYS
12. In order to ensure proper timekeeping, the VDD SR- specification must be followed.
13. Limits should be considered typical and are not production tested.
14. These are I2C specific parameters and are not tested, however, they are used to set conditions for testing devices to validate specification.
15. Minimum VDD and/or VBAT of 1V to sustain the SRAM. The value is based on characterization and it is not tested.
16. To avoid EEPROM recall issues, it is advised to use this minimum power up slew rate. Not tested, shown as typical only.
17. Defined as the deviation from a target oscillator frequency of 32,768.0Hz at room temperature.
18. Defined as the deviation from the room temperature measured 1Hz frequency, VDD = 3.3V, at TA = -40°C to +85°C.
19. Defined as the deviation at room temperature from the measured 1Hz frequency (or equivalent) at VDD = 3.3, over the range of VDD = 2.7V to
VDD =5.5V.
I2C Interface Specifications Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise specified.
Boldface limits apply over the operating temperature range, -40°C to +85°C. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 7)
TYP
(Note 8)
MAX
(Note 7)
UNITS
NOTES
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| ISL12022MIBZR5421 | 功能描述:实时时钟 REAL TIME CLK W/MFK IMPROVED ESD AIR RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| ISL12022MIBZ-T | 功能描述:实时时钟 REAL TIME CLK & TEMP COMPENSATED CRYSTAL RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| ISL12022MIBZ-T7A | 功能描述:IC RTC/CALENDAR TEMP SNSR 20SOIC RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| ISL12022MIBZ-TR5421 | 功能描述:实时时钟 REAL TIME CLK W/MFK IMPROVED ESD AIR RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| ISL12022MR5421 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM, Integrated 5ppm |
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