参数资料
型号: ISL6341IRZ-T
厂商: Intersil
文件页数: 4/17页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 10-TDFN
标准包装: 6,000
PWM 型: 电压模式
输出数: 1
频率 - 最大: 330kHz
占空比: 85%
电源电压: 4.5 V ~ 14.4 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 10-WFDFN 裸露焊盘
包装: 带卷 (TR)
ISL6341, ISL6341A, ISL6341B, ISL6341C
Absolute Maximum Ratings
Thermal Information
Supply Voltage, (V CC ) . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V
Thermal Resistance (Typical)
θ JA (°C/W)
θ JC (°C/W)
BOOT Voltage (V BOOT-GND ). . . . . . . . . . . . . . . . GND - 0.3V to 36V
BOOT to PHASE Voltage (V BOOT - V PHASE ) . . . GND - 0.3V to 15V
-0.3V to 16V (<10ns, 10μJ)
UGATE Voltage (V UGATE ) . . . . . . . V PHASE - 0.3V to V BOOT + 0.3V
V PHASE - 3.5V (<100ns Pulse Width, 2μJ) to V BOOT +0.3V
LGATE/OCSET Voltage (V LGATE ) . . . . . . GND - 0.3V to V CC + 0.3V
GND - 5V (<100ns Pulse Width, 2μJ) to V CC + 0.3V
PHASE Voltage (V PHASE ) . . . . . . . . . .GND - 0.3V to V BOOT + 0.3V
GND - 8V (<400ns, 20μJ) to 30V (<200ns, V BOOT-GND <36V)
FB, VOS, COMP/EN Voltage . . . . . . . . . . . . . . . . . GND - 0.3V to 6V
PGOOD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
10 Ld TDFN Package (Notes 1, 2). . . . 44 3.5
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . -65°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
Operating Conditions
Supply Voltage Range, V CC . . . . . . . . . . . . . . . . . . . +4.5V to 14.4V
Ambient Temperature Range
ISL6341xCRZ (Commercial) . . . . . . . . . . . . . . . . . . 0°C to +70°C
ISL6341xIRZ (Industrial) . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-40°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air, with “direct attach” features. See
Tech Brief TB379 for details.
2. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Test Conditions: V CC = 12V, T J = 0°C to +85°C, Unless Otherwise Noted. Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V CC SUPPLY CURRENT
Input Bias Supply Current
I VCC_dis
V CC = 12V; disabled
7.0
mA
Input Bias Supply Current
I VCC_en
V CC = 12V; enabled (but not switching)
6.4
8.9
10.4
mA
POWER-ON RESET
Rising V CC POR Threshold
V CC POR Threshold Hysteresis
V POR
3.8
0.15
4.2
0.48
4.47
0.85
V
V
OSCILLATOR
Switching Frequency
f OSC
ISL6341C, ISL6341CC
ISL6341I, ISL6341CI
ISL6341AC, ISL6341BC
ISL6341AI, ISL6341BI
270
240
540
510
300
300
600
600
330
330
660
660
kHz
kHz
kHz
kHz
Ramp Amplitude (Note 3)
Δ V OSC
1.5
V P-P
REFERENCE
Reference Voltage Tolerance
V REF
ISL6341C, ISL6341AC, ISL6341BC,
0.7936
0.8000
0.8064
V
ISL6341CC
ISL6341I, ISL6341AI, ISL6341BI, ISL6341CI
0.7920
0.8000
0.8080
V
ERROR AMPLIFIER
DC Gain (Note 3)
Gain-Bandwidth Product (Note 3)
Slew Rate (Note 3)
GAIN
GBWP
SR
96
20
8
dB
MHz
V/μs
GATE DRIVERS
Upper Gate Source Impedance
Upper Gate Sink Impedance
Lower Gate Source Impedance
Lower Gate Sink Impedance
Upper Gate Source Impedance
4
R UG-SRCh V CC = 12V; I = 50mA
R UG-SNKh V CC = 12V; I = 50mA
R LG-SRCh V CC = 12V; I = 50mA
R LG-SNKh V CC = 12V; I = 50mA
R UG-SRCl V CC = 5V; I = 50mA
2.1
1.6
1.4
1.0
2.4
Ω
Ω
Ω
Ω
Ω
FN6538.2
December 2, 2008
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